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| e PTB 20135 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 960 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 100 Output Power (Watts) 80 60 40 2013 5 LOT COD E VCC = 26 V 20 0 0 2 4 6 8 10 12 14 16 18 ICQ = 200 mA f = 960 MHz Input Power (Watts) Package 20216 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 20 165 0.95 -40 to +150 1.06 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20135 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 85 W, ICQ = 200 mA, f = 960 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 85 W, ICQ = 200 mA, f = 960 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 60 W(PEP), ICQ = 200 mA, f1 = 959.95 MHz, f2 = 960.00 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 60 W(PEP), ICQ = 200 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C IMD Min 8.0 50 -- Typ 9.5 -- -31 Max -- -- -- Units dB % dBc -- -- 10:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 85 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 925 942 960 R 3.0 2.7 2.6 Z Source jX -1.0 -0.7 -0.4 R 1.4 1.4 1.4 Z Load jX 0.1 -0.2 0.2 2 5/19/98 e Typical Performance Output Power vs. Supply Voltage 100 -15 PTB 20135 Intermodulation Distortion vs. Output Power VCC = 26 V Output Power (Watts) 85 -20 IMD (dBc) ICQ = 200 mA f1 = 959.95 MHz f2 = 960.00 MHz 70 -25 55 ICQ = 200 mA Pin = 11 W f = 960 MHz -30 40 17 19 21 23 25 27 -35 36 42 48 54 60 66 72 Vcc, Supply Voltage Output Power (Watts-PEP) Gain vs. Frequency (as measured in a broadband circuit) 11 60 Efficiency vs. Output Power 10 Efficiency (%) 45 Gain (dB) 9 30 VCC = 26 V 8 VCC = 26 V 15 ICQ = 200 mA Pout = 85 W 930 935 940 945 950 955 960 ICQ = 200 mA f = 960 MHz 5 25 45 65 85 105 7 925 0 Frequency (MHz) Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20135 Uen Rev. D 09-28-98 3 5/19/98 |
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